A novel resist freeze process for double imaging

被引：10

作者：

Abdallah, David J. ^{[1
]}

Alemy, Eric ^{[1
]}

Chakrapani, Srinivasan ^{[1
]}

Padmanaban, Munirathna ^{[1
]}

Dammel, Ralph R. ^{[1
]}

机构：

[1] AZ Elect Mat USA Corp, Somerville, NJ 08876 USA

来源：

JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY | 2008年 / 21卷 / 05期

关键词：

double patterning; double imaging; photoresist freeze; ArF lithography;

D O I：

10.2494/photopolymer.21.655

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

In this study we explore a novel resist freeze process for dual imaging with broad resist and lithography track compatibility. The Vapor Reaction Chamber (VRC) hardware is similar to a HMDS prime chamber. Freeze liquids are selected based on their ability to freeze a positive resist image, and among the materials tested, low boiling point diamines were found to be the most effective. Temperature, freeze material, gas flow rate and time are varied to adjust the process and investigate the impact on dual image profiles. Rapid freezing of the 1(st) photoresist image is achieved when the VRC temperature is near the T(g) of the photoresist polymers and process times are compatible with track wafer flows. The process has been used to create dual imaging features with dry lithography to achieve 45 nm dense L/S patterns.

引用

页码：655 / 663

页数：9