Role of dislocation scattering on electron mobility in coalescent epitaxial lateral overgrowth layers of InP

被引：5
作者：
Oyama, Yutaka [1 ]
机构：
[1] Tohoku Univ, Dept Mat Sci & Engn, Grad Sch Engn, Sendai, Miyagi 9808579, Japan
来源：
JOURNAL OF APPLIED PHYSICS | 2014年 / 115卷 / 04期
关键词：
VAPOR-PHASE EPITAXY; III-V COMPOUNDS; GAN; PRESSURE; GROWTH;
D O I：
10.1063/1.4864016
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In order to clarify the effects of dislocation scattering on electron transport properties, temperature dependent (15-300 K) Hall-effect measurements were applied to the dislocated coalescent and dislocation-free non-coalescent ELO layers of InP prepared by the liquid phase epitaxy. The coalescent ELO layers contain a large number of dislocations, and the non-coalescent ELO layers are dislocation-free. Taking into account, the various electron scattering mechanisms in compound semiconductors, the temperature dependences of electron mobility were analyzed. It is shown that the dislocation scattering based on the charged dislocation line model is dominant transport mechanism in the dislocated coalescent ELO layers at low temperature. (C) 2014 AIP Publishing LLC.
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页数：4
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共 18 条
  • [1] Brooks H., 1955, ADV ELECTRONICS ELEC, P158
  • [2] NEUTRAL IMPURITY SCATTERING IN SEMICONDUCTORS
    ERGINSOY, C
    [J]. PHYSICAL REVIEW, 1950, 79 (06): : 1013 - 1014
  • [3] METALLOGRAPHIC DEVELOPMENT OF CRYSTAL DEFECTS IN INP
    HUBER, A
    LINH, NT
    [J]. JOURNAL OF CRYSTAL GROWTH, 1975, 29 (01) : 80 - 84
  • [4] Effect of scattering by strain fields surrounding edge dislocations on electron transport in two-dimensional electron gases
    Jena, D
    Mishra, UK
    [J]. APPLIED PHYSICS LETTERS, 2002, 80 (01) : 64 - 66
  • [5] Effect of the Surface Morphology of Seed and Mask Layers on InP Grown on Si by Epitaxial Lateral Overgrowth
    Junesand, Carl
    Hu, Chen
    Wang, Zhechao
    Metaferia, Wondwosen
    Dagur, Pritesh
    Pozina, Galia
    Hultman, Lars
    Lourdudoss, Sebastian
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 2012, 41 (09) : 2345 - 2349
  • [6] Towards a monolithically integrated III-V laser on silicon: optimization of multi-quantum well growth on InP on Si
    Kataria, H.
    Junesand, C.
    Wang, Z.
    Metaferia, W.
    Sun, Y. T.
    Lourdudoss, S.
    Patriarche, G.
    Bazin, A.
    Raineri, F.
    Mages, P.
    Julian, N.
    Bowers, J. E.
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2013, 28 (09)
  • [7] Dislocation-free large area InP ELO layers by liquid phase epitaxy
    Kochiya, T
    Oyama, Y
    Kimura, T
    Suto, K
    Nishizawa, J
    [J]. JOURNAL OF CRYSTAL GROWTH, 2005, 281 (2-4) : 263 - 274
  • [8] Preparation of large GaN substrates
    Motoki, K
    Okahisa, T
    Nakahata, S
    Matsumoto, A
    Kimura, H
    Kasai, H
    Takemoto, K
    Uematsu, K
    Ueno, M
    Kumagai, Y
    Koukitu, A
    Seki, H
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 93 (1-3): : 123 - 130
  • [9] Violet InGaN/GaN/AlGaN-based laser diodes with an output power of 420 mW
    Nakamura, S
    Senoh, M
    Nagahama, S
    Iwasa, N
    Yamada, T
    Matsushita, T
    Kiyoku, H
    Sugimoto, Y
    Kozaki, T
    Umemoto, H
    Sano, M
    Chocho, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1998, 37 (6A): : L627 - L629
  • [10] NEARLY PERFECT CRYSTAL-GROWTH OF III-V COMPOUNDS BY TEMPERATURE DIFFERENCE METHOD UNDER CONTROLLED VAPOR-PRESSURE
    NISHIZAWA, J
    OKUNO, Y
    TADANO, H
    [J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 215 - 222
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