Oxygen-deficiency-activated anomalous transport in La2/3Sr1/3MnO3-δ thin films deposited by laser ablation

被引：7

作者：

Liu, JM ^{[1
]}

Zhang, YX

Liu, ZG

Du, YW

Zhang, HH

Yu, Z

Ong, CK

机构：

[1] Nanjing Univ, Solid State Microstruct Lab, Nanjing 210093, Peoples R China

[2] Huazhong Univ Sci & Technol, Lab Laser Technol, Wuhan, Peoples R China

[3] Natl Univ Singapore, Dept Phys, Singapore 119260, Singapore

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2002年 / 14卷 / 12期

关键词：

D O I：

10.1088/0953-8984/14/12/307

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The transport in oxygen-deficient polycrystalline La2/3Sr1/3MnO3-delta thin films deposited on Si(l 11) substrates using laser ablation is studied by measuring the resistivity and ac magnetic susceptibility over the range 2-300 K. The oxygen deficiency results in a serious shift of the insulating-metal (IM) transition toward the low-temperature side and anomalous transport behaviour over the low-temperature range. The ac susceptibility measurement reveals that, upon cooling, the sample exhibits a ferromagnetic transition, a weak anomaly at the IM transition and an antiferromagnetic (AFM) transition which may mainly arise from the charge ordering. Partial melting of the AFM state under a low magnetic field of 750 Oe is observed at 4.2 K.

引用

页码：3167 / 3173

页数：7

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