Memory devices based on lanthanide (SM3+, EU3+, Gd3+) complexes

被引：49
作者：
Fang, JF
You, H
Chen, JS
Lin, J
Ma, DG [1 ]
机构：
[1] Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China
[2] Chinese Acad Sci, Grad Sch, Changchun 130022, Peoples R China
来源：
INORGANIC CHEMISTRY | 2006年 / 45卷 / 09期
关键词：
D O I：
10.1021/ic051783y
中图分类号：
O61 [无机化学];
学科分类号：
070301 ; 081704 ;
摘要：
Memory effects in single-layer organic light-emitting devices based on Sm3+, Gd3+, and Eu3+ rare earth complexes were realized. The device structure was indium-tin-oxide (ITO)/3,4-poly(ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT)/Poly(N-vinyl carbazole) (PVK): rare earth complex/LiF/Ca/Ag. It was found experimentally that all the devices exhibited two distinctive bistable conductivity states in current-voltage characteristics by applying negative starting voltage, and more than 10(6) write-read-erase-reread cycles were achieved without degradation. Our results indicate that the rare earth organic complexes are promising materials for high-density, low-cost memory application besides the potential application as organic light-emitting materials in display devices.
引用
收藏
页码：3701 / 3704
页数：4
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