A MEMS capacitor with improved RF power handling capability

被引：0

作者：

Girbau, D. ^{[1
]}

Otegi, N. ^{[1
]}

Pradell, L. ^{[1
]}

Lazaro, A. ^{[1
]}

机构：

[1] Univ Politecn Cataluna, Signal Theory & Commun Dept, ES-08034 Barcelona, Spain

来源：

35TH EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3, CONFERENCE PROCEEDINGS | 2005年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a structure of MEMS capacitor providing independence of its nominal capacity and tuning range from the applied RF signal power. The capacitor includes a third parallel plate acting as an electrode to which an extra DC voltage is applied to compensate for the self-actuation effect. This means that the device can be used in many applications working under different RF power conditions, without changing its performance - nominal capacity and tuning range Capacitor design concept and simulations are provided. It has been manufactured using a standard surface-micromachining MEMS technology. Experimental results are presented, validating the concept and demonstrating its feasibility and advantages.

引用

页码：1447 / 1450

页数：4

共 6 条

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