Anisotropic Crystalline Organic Step-Flow Growth on Deactivated Si Surfaces

被引：34

作者：

Wagner, Sean R. ^{[1
]}

Lunt, Richard R. ^{[2
]}

Zhang, Pengpeng ^{[1
]}

机构：

[1] Michigan State Univ, Dept Phys & Astron, E Lansing, MI 48824 USA

[2] Michigan State Univ, Dept Chem Engn & Mat Sci, E Lansing, MI 48824 USA

来源：

PHYSICAL REVIEW LETTERS | 2013年 / 110卷 / 08期

关键词：

SELF-ASSEMBLED MONOLAYERS; THIN-FILMS; SILICON SURFACE; GRAIN-BOUNDARY; EPITAXY; ORGANIZATION; TEMPERATURE; ADSORPTION; SEXIPHENYL; TRANSPORT;

D O I：

10.1103/PhysRevLett.110.086107

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report the first demonstration of anisotropic step-flow growth of organic molecules on a semiconducting substrate using metal phthalocyanine thermally deposited on the deactivated Si(111)-B root 3 x root 3 p R30 degrees surface. With scanning probe microscopy and geometric modeling, we prove the quasiepitaxial nature of this step-flow growth that exhibits no true commensurism, despite a single dominant long-range ordered relationship between the organic crystalline film and the substrate, uniquely distinct from inorganic epitaxial growth. This growth mode can likely be generalized for a range of organic molecules on deactivated Si surfaces and access to it offers new potential for the integration of ordered organic thin films in silicon-based electronics. DOI: 10.1103/PhysRevLett.110.086107

引用

页数：5

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