SELF-HETERODYNE DIODE MIXER WITH GCPW USING THIN FILM PROCESS AT 60 GHZ

被引：1

作者：

Choi, Seung-Woon ^{[1
]}

Kim, Yong-Hoon ^{[2
]}

机构：

[1] KARI, Dept Satellite Elect, Taejon 305333, South Korea

[2] GIST, Dept Mechatron, Kwangju 500712, South Korea

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2009年 / 51卷 / 01期

关键词：

self-heterodyne mixer; bias mixer; GCPW; thin film;

D O I：

10.1002/mop.23959

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

self-heterodyne diode mixer is proposed using thin film process based on alumina substrate at 60 GHz in conjunction with grounded coplanar waveguide, transition. To down-convert both very low RF and LO signals received simultaneously from transmitter for self-heterodyne communication scheme, the proposed mixer adapted with the knee voltage bias condition of 0.65 [V] improves its mixing efficiency, significantly. The designed SHM shows the conversion loss of -15.13 dB at RF and LO frequencies of 60.565 and 59.01 GHz., respectively with both input powers of -15.3 dBm and it also can defines IMD free input dynamic range as -30 dBm. The measured return losses satisfies with more than 20 dB and 9 for RF/LO input and IF output port, respectively. (C) 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 13-15, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23959

引用

页码：13 / 15

页数：3