A Lifetime Estimation Technique for Voltage Source Inverters

被引:313
作者
Huang, Hui [1 ]
Mawby, P. A. [1 ]
机构
[1] Univ Warwick, Coventry CV4 7AL, W Midlands, England
关键词
Insulated gate bipolar transistor (IGBT); inverter; lifetime estimation; modeling; power cycling; reliability; renewable energy; MODELS; IGBT; DIODE;
D O I
10.1109/TPEL.2012.2229472
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a method to estimate the inverter lifetime so that we can predict a failure prior to it actually happening. The key contribution of this study is to link the physics of the power devices to a large scale system simulation within a reasonable framework of time. By configuring this technique to a real system, it can be used as a converter design tool or online lifetime estimation tool. In this paper, the presented method is applied to the grid side inverter to show its validity. A power cycling test is designed to gather the lifetime data of a selected insulated gate bipolar transistor (IGBT) module (SKM50GB123D). Die-attach solder fatigue is found out to be the dominant failure mode of this IGBT module under the designed accelerated tests. Furthermore, the crack initiation is found to be highly stress dependent while the crack propagation is almost independent with stress level. Two different damage accumulation methods are used and the estimation results are compared.
引用
收藏
页码:4113 / 4119
页数:7
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