Dependence of threshold current density, carrier lifetime and optical gain coefficient on donor concentration in 1.3 mu m n-type modulation-doped strained multiquantum well lasers

被引：4

作者：

Nakahara, K

Uomi, K

Tsuchiya, T

Niwa, A

机构：

[1] Central Research Laboratory, Hitachi Ltd., Kokubunji-shi, Tokyo 185, 1-280, Higashi-koigakubo

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 13期

关键词：

semiconductor quantum wells; semiconductor junction lasers;

D O I：

10.1049/el:19960788

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The dependence of lasing properties on the donor concentration is experimentally investigated for 1.3 mu m n-type modulation-doped (MD) strained multiquantum well (MQW) lasers. The threshold current density has a minimum at a donor concentration of 3 x 10(18) cm(-3); the carrier lifetime and the optical gain coefficient decrease with the donor concentration. The turn-on delay time of 100 ps can be expected at 85 degrees C when thp MD-MQW structure is applied to a low-leakage buried heterostructure laser.

引用

页码：1200 / 1202

页数：3