MOS capacitance measurements for high-leakage thin dielectrics

被引:463
作者
Yang, KJ [1 ]
Hu, CM [1 ]
机构
[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
基金
美国国家科学基金会;
关键词
capacitance measurement; MIS devices;
D O I
10.1109/16.772500
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
As oxide thickness is reduced below 2.5 nm in MOS devices, both series and shunt parasitic resistances become significant in capacitance-voltage (C-V) measurements. A new technique is presented which allows the frequency-independent device capacitance to be accurately extracted from impedance measurements at two frequencies. This technique is demonstrated for a 1.7 nm SiO2 capacitor.
引用
收藏
页码:1500 / 1501
页数:2
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