Electrical spin injection from ZnMnSe into InGaAs quantum wells and quantum dots

被引：39
作者：
Löffler, W
Tröndle, D
Fallert, J
Kalt, H
Litvinov, D
Gerthsen, D
Lupaca-Schomber, J
Passow, T
Daniel, B
Kvietkova, J
Grün, M
Klingshim, C
Hetterich, M
机构：
[1] Univ Karlsruhe, Inst Angew Phys, D-76128 Karlsruhe, Germany
[2] CFN, DFG, Ctr Funct Nanostruct, D-76128 Karlsruhe, Germany
[3] Univ Karlsruhe, Lab Elektronenmikroskopie, D-76128 Karlsruhe, Germany
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 06期
关键词：
Zinc compounds;
D O I：
10.1063/1.2172221
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on efficient injection of electron spins into InGaAs-based nanostructures. The spin light-emitting diodes incorporate an InGaAs quantum well or quantum dots, respectively, as well as a semimagnetic ZnMnSe spin-aligner layer. We show a circular polarization degree of up to 35% for the electroluminescence from InGaAs quantum wells and up to 21% for InGaAs quantum dots. We can clearly attribute the polarization of the emitted photons to the spin alignment in the semimagnetic layer by comparison to results from reference devices (where the ZnMnSe is replaced by ZnSe) and from all-optical measurements. (c) 2006 American Institute of Physics.
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页数：3
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