Manganese-based room temperature ferromagnetism in gallium arsenide

Manganese is deposited onto GaAs(001) substrates in high vacuum conditions (10(-7) hPa), with substrates held at 300 degrees C. It is shown that this procedure yields to the diffusion of magnanese into gallium arsenide and the formation of a layer which exhibits room temperature ferromagnetism, with highly diluted Mn (below 1 atomic percent). X-ray absorption fine structure determinations at the Mn and Ga K-edges evidenced that Mn is not placed into substitutional Ga sites in GaAs. Most probably, Mn forms MnO clusters with rocksalt local structure. These clusters are the origin of the detected ferromagnetism.