CMOS Photodetectors Integrated With Plasmonic Color Filters

被引：115

作者：

Chen, Qin ^{[1
]}

Chitnis, Danial ^{[2
]}

Walls, Kirsty ^{[1
]}

Drysdale, Tim D. ^{[1
]}

Collins, Steve ^{[2
]}

Cumming, David R. S. ^{[1
]}

机构：

[1] Univ Glasgow, Sch Engn, Glasgow G12 8LT, Lanark, Scotland

[2] Univ Oxford, Dept Engn Sci, Oxford OX1 3PJ, England

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2012年 / 24卷 / 03期

基金：

英国工程与自然科学研究理事会;

关键词：

Complementary metal oxide semiconductor image sensors; nanophotonics; optical filter; surface plasmon; TRANSMISSION; CROSSTALK;

D O I：

10.1109/LPT.2011.2176333

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A single-pixel plasmonic complementary metal oxide semiconductor (CMOS) photo sensor consisting of a plasmonic color filter integrated on a CMOS photodiode was fabricated using electron beam lithography and dry etch. The photocurrent measurement results confirmed the three primary color filtering responses that could be achieved in a single layer of nanostructured aluminium film. Finite-difference time-domain simulation demonstrated a good agreement of the reflection spectra with the measured result. This research can lead to the development of advanced CMOS image sensors with low cost and low crosstalk.

引用

页码：197 / 199

页数：3

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