Electron energy state dependence on the shape and size of semiconductor quantum dots

被引:52
|
作者
Li, YM [1 ]
Voskoboynikov, O
Lee, CP
Sze, SM
Tretyak, O
机构
[1] Natl Nano Device Labs, Hsinchu 300, Taiwan
[2] Natl Chiao Tung Univ, Microelect & Informat Syst Res Ctr, Hsinchu, Taiwan
[3] Kiev Taras Shevchenko Univ, UA-252030 Kiev, Ukraine
[4] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 300, Taiwan
关键词
D O I
10.1063/1.1412578
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this article we present a unified model for studying the effect of the sizes and shapes of small semiconductor quantum dots on the electron and hole energy states. We solved the three-dimensional effective one band Schrodinger equation for semiconductor quantum dots with disk, lenticular, and conical shapes. For small InAs/GaAs quantum dots we found a substantial difference in the ground state and first excited state electron energies for dots with the same volume but different shapes. Electron energy dependence on volume is found to be quite different from the commonly quoted V-2/3. The exponent can vary over a wide range and depends on the dot shapes. (C) 2001 American Institute of Physics.
引用
收藏
页码:6416 / 6420
页数:5
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