Soft-Error in SRAM at Ultra-Low Voltage and Impact of Secondary Proton in Terrestrial Environment

被引：15

作者：

Uemura, Taiki ^{[1
]}

Kato, Takashi ^{[1
]}

Matsuyama, Hideya ^{[1
]}

Hashimoto, Masanori ^{[2
]}

机构：

[1] Fujitsu Semicond Ltd, Tokyo 1970833, Japan

[2] Osaka Univ, Dept Informat Syst Engn, Suita, Osaka 5650871, Japan

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2013年 / 60卷 / 06期

关键词：

Alpha; low voltage; multiple-bit-upset; neutron; single event; soft-error; SRAM; MULTIPLE CELL UPSETS;

D O I：

10.1109/TNS.2013.2291274

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents soft-error measurement results through neutron and alpha irradiation tests and simulation in SRAM at ultra-low voltages, down to 0.19 V. Soft-error-rate at 0.19 V is higher than at 1.0 V by two orders of magnitude. This measurement result supported by simulation clarifies that direct ionization from secondary protons generated by nuclear reaction with neutron collision contribute to a dramatic increase in SRAM soft-error-rate at ultra-low voltages in terrestrial environment.

引用

收藏

页码：4232 / 4237

页数：6

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