Photo-dynamic Burstein-Moss doping of PbS quantum dots in solution by single and two-photon optical pumping

被引：7

作者：

Ullrich, B. ^{[1
,2
]}

Barik, P. ^{[1
]}

Singh, A. K. ^{[1
]}

Garcia-Ramirez, E. V. ^{[3
]}

Reyes-Esqueda, J. A. ^{[3
]}

机构：

[1] Univ Nacl Autonoma Mexico, Inst Ciencias Fis, Cuernavaca 62210, Morelos, Mexico

[2] Ullrich Photon LLC, Wayne, OH 43466 USA

[3] Univ Nacl Autonoma Mexico, Inst Fis, Mexico City 04510, DF, Mexico

来源：

Optical Materials Express | 2015年 / 5卷 / 11期

关键词：

GAP EMISSION; ABSORPTION; PHOTOLUMINESCENCE; DEPENDENCE; DEPOSITION;

D O I：

10.1364/OME.5.002431

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report photo-dynamically provoked photoluminescence blue shifts up to similar to 8 meV of oleic acid capped 2.5 nm PbS quantum dots in toluene at room temperature. Exposing the solution to pulsed laser (26 ps, 10 Hz) emissions at 532 nm and 1064 nm, the photo-induced band gap increase is evoked by single and two-photon transitions, respectively. The emission peak blue shifts, recorded in reflection and transmission geometries, show a 2/3 power dependence on the optical stimulus gain, rendering the Burstein-Moss shift to be the underlying inherent n-type doping effect in the quantized colloid. (C) 2015 Optical Society of America

引用

页码：2431 / 2436

页数：6

共 26 条

[1]

Auxier J., 2000, C LAS EL OSA

[2] ELECTRON ELECTRON AND ELECTRON-HOLE INTERACTIONS IN SMALL SEMICONDUCTOR CRYSTALLITES - THE SIZE DEPENDENCE OF THE LOWEST EXCITED ELECTRONIC STATE [J].

BRUS, LE .

JOURNAL OF CHEMICAL PHYSICS, 1984, 80 (09) :4403-4409

[3]

EFROS AL, 1982, SOV PHYS SEMICOND+, V16, P772

[4] ABSORPTION AND INTENSITY-DEPENDENT PHOTOLUMINESCENCE MEASUREMENTS ON CDSE QUANTUM DOTS - ASSIGNMENT OF THE 1ST ELECTRONIC-TRANSITIONS [J].

EKIMOV, AI ;

HACHE, F ;

SCHANNEKLEIN, MC ;

RICARD, D ;

FLYTZANIS, C ;

KUDRYAVTSEV, IA ;

YAZEVA, TV ;

RODINA, AV ;

EFROS, AL .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1993, 10 (01) :100-107

[5] Synthesis and Transformation of Zn-Doped PbS Quantum Dots [J].

He, Xingliang ;

Demchenko, Iraida N. ;

Stolte, W. C. ;

van Buuren, Anthony ;

Liang, Hong .

JOURNAL OF PHYSICAL CHEMISTRY C, 2012, 116 (41) :22001-22008

[6] DYNAMIC BURSTEIN-MOSS SHIFT IN SEMICONDUCTOR COLLOIDS [J].

KAMAT, PV ;

DIMITRIJEVIC, NM ;

NOZIK, AJ .

JOURNAL OF PHYSICAL CHEMISTRY, 1989, 93 (08) :2873-2875

[7] Quantization of multiparticle Auger rates in semiconductor quantum dots [J].

Klimov, VI ;

Mikhailovsky, AA ;

McBranch, DW ;

Leatherdale, CA ;

Bawendi, MG .

SCIENCE, 2000, 287 (5455) :1011-1013

[8] Heavily doped n-type PbSe and PbS nanocrystals using ground-state charge transfer from cobaltocene [J].

Koh, Weon-kyu ;

Koposov, Alexey Y. ;

Stewart, John T. ;

Pal, Bhola N. ;

Robel, Istvan ;

Pietryga, Jeffrey M. ;

Klimov, Victor I. .

SCIENTIFIC REPORTS, 2013, 3

[9] Heavily Doped Semiconductor Nanocrystal Quantum Dots [J].

Mocatta, David ;

Cohen, Guy ;

Schattner, Jonathan ;

Millo, Oded ;

Rabani, Eran ;

Banin, Uri .

SCIENCE, 2011, 332 (6025) :77-81

[10]

Moss T.S., 1973, SEMICONDUCTOR OPTOEL

← 1 2 3 →