Characterizing nanoimprint pattern cross-section and fidelity from X-ray reflectivity

被引:0
作者
Lee, Hae-Jeong [1 ]
Soles, Christopher L. [1 ]
Ro, Hyun Wook [1 ]
Hines, D. R. [2 ]
Jones, Ronald L. [1 ]
Lin, Eric K. [1 ]
Karim, Alamgir [1 ]
Wu, Wen-Li [1 ]
机构
[1] Natl Inst Stand & Technol, Polymers Div, 100 Bur Dr,MS 8541, Gaithersburg, MD 20899 USA
[2] Univ Maryland, Lab Phys Sci, College Pk, MD 20740 USA
来源
EMERGING LITHOGRAPHIC TECHNOLOGIES X, PTS 1 AND 2 | 2006年 / 6151卷
关键词
nanoimprint lithography; pattern fidelity; x-ray reflectivity; cross-section; residual layer; pattern profile;
D O I
10.1117/12.656826
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
To address several of the challenges associated with nanoimprint lithography, new measurement techniques that can correlate the physical structure of an imprinted nanostructure with the materials used and the imprinting conditions are critical for optimizing imprint processes. Specular X-ray reflectivity (SXR) is a widely used technique to quantify the thickness, density, and roughness of the non-patterned films. Here we extend the applicability of SXR to imprinted nanostructures by characterizing the pattern height, the line-to-space ratio as a function of pattern height, the residual layer thickness, and the fidelity of pattern transfer.
引用
收藏
页码:U283 / U289
页数:7
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