A review on hybrid nanolaminate materials synthesized by deposition techniques for energy storage applications

被引:102
作者
Azadmanjiri, Jalal [1 ]
Berndt, Christopher C. [1 ,2 ]
Wang, James [1 ]
Kapoor, Ajay [1 ]
Srivastava, Vijay K. [3 ]
Wen, Cuie [1 ]
机构
[1] Swinburne Univ Technol, Fac Engn & Ind Sci, Hawthorn, Vic 3122, Australia
[2] SUNY Stony Brook, Dept Mat Sci & Engn, Stony Brook, NY 11794 USA
[3] Banaras Hindu Univ, Dept Mech Engn, Indian Inst Technol, Varanasi 221005, Uttar Pradesh, India
关键词
ATOMIC LAYER DEPOSITION; HIGH DIELECTRIC-CONSTANT; THIN-FILMS; GATE DIELECTRICS; ELECTRICAL CHARACTERISTICS; HIGH-PERMITTIVITY; NANOSHEET CRYSTALLITES; THERMAL-CONDUCTIVITY; BREAKDOWN STRENGTH; POLYMER COMPOSITE;
D O I
10.1039/c3ta14034b
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Nanostructured materials such as nanocomposites and nanolaminates are currently of intense interest in modern materials research. Nanolaminate materials are fully dense, ultra-fine grained solids that exhibit a high concentration of interface defects. They may be developed for engineering applications that take advantage of enhanced mechanical properties or for devices such as energy storage and memory storage capacitors. Nanolaminates can be grown using atom-by-atom deposition techniques that are designed with different stacking sequences and layer thicknesses. The properties of fabricated nanolaminates depend on their compositions and thicknesses. These can be demonstrated within the synthesis process by thickness control of each layer and interfacial chemical reaction between layers. In fact, dielectrics with the formed thin layer have efficient dielectric constant and high insulation characteristics. Dielectric materials with giant dielectric constants can be fabricated as modified single, binary and perovskite oxides. A review of the advantages offered by nanolaminate structures for high performance energy storage devices is presented. Developments of dielectric materials that are formed from a thin layer approach are evaluated. The influence of the interface layer on the dielectric constant of nanolaminate films is assessed from the perspective of conferring a giant dielectric constant and high insulation characteristics. The incorporation of dopants and site-engineering techniques, as well as layer-by-layer structures, which can both be suitable for improving dielectric properties of dielectric nanolaminates, is detailed. Finally, the current status and development of artificial dielectric materials for high performance energy storage devices formed by dielectric nanolaminates are presented.
引用
收藏
页码:3695 / 3708
页数:14
相关论文
共 127 条
  • [71] Interface-controlled high dielectric constant Al2O3/TiOx nanolaminates with low loss and low leakage current density for new generation nanodevices
    Lee, Geunhee
    Lai, Bo-Kuai
    Phatak, Charudatta
    Katiyar, Ram S.
    Auciello, Orlando
    [J]. JOURNAL OF APPLIED PHYSICS, 2013, 114 (02)
  • [72] Poly-Si gate CMOSFETs with HfO2-Al2O3 laminate gate dielectric for low power applications
    Lee, JH
    Kim, YS
    Jung, HS
    Lee, JH
    Lee, NI
    Kang, HK
    Ku, JH
    Kang, HS
    Kim, YK
    Cho, KH
    Sub, KP
    [J]. 2002 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2002, : 84 - 85
  • [73] Atomic layer deposition chemistry:: Recent developments and future challenges
    Leskelä, M
    Ritala, M
    [J]. ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2003, 42 (45) : 5548 - 5554
  • [74] Nanocomposites of Ferroelectric Polymers with TiO2 Nanoparticles Exhibiting Significantly Enhanced Electrical Energy Density
    Li, Junjun
    Seok, Sang Il
    Chu, Boojin
    Dogan, Fatih
    Zhang, Qiming
    Wang, Qing
    [J]. ADVANCED MATERIALS, 2009, 21 (02) : 217 - 221
  • [75] Controllable giant dielectric constant in AlOx/TiOy nanolaminates
    Li, Wei
    Chen, Zhijun
    Premnath, Ramesh N.
    Kabius, Bernd
    Auciello, Orlando
    [J]. JOURNAL OF APPLIED PHYSICS, 2011, 110 (02)
  • [76] Giant dielectric constant dominated by Maxwell-Wagner relaxation in Al2O3/TiO2 nanolaminates synthesized by atomic layer deposition
    Li, Wei
    Auciello, Orlando
    Premnath, Ramesh N.
    Kabius, Bernd
    [J]. APPLIED PHYSICS LETTERS, 2010, 96 (16)
  • [77] Nanosheets of Oxides and Hydroxides: Ultimate 2D Charge-Bearing Functional Crystallites
    Ma, Renzhi
    Sasaki, Takayoshi
    [J]. ADVANCED MATERIALS, 2010, 22 (45) : 5082 - 5104
  • [78] Trends in the ultimate breakdown strength of high dielectric-constant materials
    McPherson, JW
    Kim, J
    Shanware, A
    Mogul, H
    Rodriguez, J
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (08) : 1771 - 1778
  • [79] Composition, surface morphology and electrical characteristics of Al2O3-TiO2 nanolaminates and AlTiO films on silicon
    Mikhelashvili, V.
    Eisenstein, G.
    [J]. THIN SOLID FILMS, 2006, 515 (01) : 346 - 352
  • [80] Degradation analysis and characterization of multifilamentary conduction patterns in high-field stressed atomic-layer-deposited TiO2/Al2O3 nanolaminates on GaAs
    Miranda, E.
    Sune, J.
    Das, T.
    Mahata, C.
    Maiti, C. K.
    [J]. JOURNAL OF APPLIED PHYSICS, 2012, 112 (06)