On the origin of the LF noise in Si/Ge MOSFETs

被引：24
作者：
Ghibaudo, G
Chroboczek, J
机构：
[1] UMR CNRS, INPG, Lab Phys Composants Semicond, ENSERG, F-38016 Grenoble 1, France
[2] France Telecom, Ctr Natl Etud Telecommun, F-38243 Meylan, France
来源：
SOLID-STATE ELECTRONICS | 2002年 / 46卷 / 03期
关键词：
1/f noise; LF noise; model SiGe pMOSFET;
D O I：
10.1016/S0038-1101(01)00112-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel analytical model for calculating, self-consistently, the static and low frequency noise characteristics LFN of Si1-mGem pMOSFETs is proposed. The model is shown to account satisfactorily for the transconductance and LFN data taken on MOSFETs originating from various sources. We have used the model for predicting the LFN behavior of generic devices having an arbitrary Ge content and thickness value of the active layers, in order to demonstrate its capacity for optimizing the noise characteristics of devices. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：393 / 398
页数：6
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