The highly photosensitive characteristics of organic thin-film transistors (OTFTs) made using soluble star-shaped oligothiophenes with four-armed pi-conjugation paths, 4(HPBT)-benzene and 4(HP3T)-benzene molecules having a relatively high quantum yield, are reported. 4(HPBT)-benzene-based organic phototransistors (OPTs) exhibited high photosensitivity (similar to 2500-4300 A W(-1)) even with low optical powers (similar to 6.8-30 mu W cm(-2)) at zero gate bias. The measured photosensitivity of the devices was much higher than that of inorganic single-crystal Si-based phototransistors, as well as that of other OPTs reported earlier. With the highly photosensitive characteristics of the 4(HPBT)-benzene-based OPTs, a high ratio of the on and off current switching of similar to 4 x 10(4) With low optical power and low gate bias was observed. The slow relaxation of the photoinduced charges and charge-trapping phenomena at the interface could lead to a reproducible memory operation for 4(HPBT)-benzene-based OPTs.
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Univ Angers, CNRS, CIMMA, UMR 6200,Grp Linear Conjugated Syst, F-49045 Angers, FranceUniv Angers, CNRS, CIMMA, UMR 6200,Grp Linear Conjugated Syst, F-49045 Angers, France
Cravino, Antonio
Roquet, Sophie
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Univ Angers, CNRS, CIMMA, UMR 6200,Grp Linear Conjugated Syst, F-49045 Angers, FranceUniv Angers, CNRS, CIMMA, UMR 6200,Grp Linear Conjugated Syst, F-49045 Angers, France
Roquet, Sophie
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Aleveque, Olivier
Leriche, Philippe
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Univ Angers, CNRS, CIMMA, UMR 6200,Grp Linear Conjugated Syst, F-49045 Angers, FranceUniv Angers, CNRS, CIMMA, UMR 6200,Grp Linear Conjugated Syst, F-49045 Angers, France
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Natl Inst Stand & Technol, Div Polymers, Mat Sci & Engn Lab, Gaithersburg, MD 20899 USANatl Inst Stand & Technol, Div Polymers, Mat Sci & Engn Lab, Gaithersburg, MD 20899 USA
DeLongchamp, DM
Sambasivan, S
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机构:Natl Inst Stand & Technol, Div Polymers, Mat Sci & Engn Lab, Gaithersburg, MD 20899 USA
Sambasivan, S
Fischer, DA
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机构:Natl Inst Stand & Technol, Div Polymers, Mat Sci & Engn Lab, Gaithersburg, MD 20899 USA
Fischer, DA
Lin, EK
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机构:Natl Inst Stand & Technol, Div Polymers, Mat Sci & Engn Lab, Gaithersburg, MD 20899 USA
Lin, EK
Chang, P
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机构:Natl Inst Stand & Technol, Div Polymers, Mat Sci & Engn Lab, Gaithersburg, MD 20899 USA
Chang, P
Murphy, AR
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Murphy, AR
Fréchet, JMJ
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Fréchet, JMJ
Subramanian, V
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机构:Natl Inst Stand & Technol, Div Polymers, Mat Sci & Engn Lab, Gaithersburg, MD 20899 USA
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Univ Angers, CNRS, CIMMA, UMR 6200,Grp Linear Conjugated Syst, F-49045 Angers, FranceUniv Angers, CNRS, CIMMA, UMR 6200,Grp Linear Conjugated Syst, F-49045 Angers, France
Cravino, Antonio
Roquet, Sophie
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Univ Angers, CNRS, CIMMA, UMR 6200,Grp Linear Conjugated Syst, F-49045 Angers, FranceUniv Angers, CNRS, CIMMA, UMR 6200,Grp Linear Conjugated Syst, F-49045 Angers, France
Roquet, Sophie
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Aleveque, Olivier
Leriche, Philippe
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Univ Angers, CNRS, CIMMA, UMR 6200,Grp Linear Conjugated Syst, F-49045 Angers, FranceUniv Angers, CNRS, CIMMA, UMR 6200,Grp Linear Conjugated Syst, F-49045 Angers, France
机构:
Natl Inst Stand & Technol, Div Polymers, Mat Sci & Engn Lab, Gaithersburg, MD 20899 USANatl Inst Stand & Technol, Div Polymers, Mat Sci & Engn Lab, Gaithersburg, MD 20899 USA
DeLongchamp, DM
Sambasivan, S
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h-index: 0
机构:Natl Inst Stand & Technol, Div Polymers, Mat Sci & Engn Lab, Gaithersburg, MD 20899 USA
Sambasivan, S
Fischer, DA
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机构:Natl Inst Stand & Technol, Div Polymers, Mat Sci & Engn Lab, Gaithersburg, MD 20899 USA
Fischer, DA
Lin, EK
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机构:Natl Inst Stand & Technol, Div Polymers, Mat Sci & Engn Lab, Gaithersburg, MD 20899 USA
Lin, EK
Chang, P
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机构:Natl Inst Stand & Technol, Div Polymers, Mat Sci & Engn Lab, Gaithersburg, MD 20899 USA
Chang, P
Murphy, AR
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机构:Natl Inst Stand & Technol, Div Polymers, Mat Sci & Engn Lab, Gaithersburg, MD 20899 USA
Murphy, AR
Fréchet, JMJ
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机构:Natl Inst Stand & Technol, Div Polymers, Mat Sci & Engn Lab, Gaithersburg, MD 20899 USA
Fréchet, JMJ
Subramanian, V
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机构:Natl Inst Stand & Technol, Div Polymers, Mat Sci & Engn Lab, Gaithersburg, MD 20899 USA