A 5-GHz Fully Integrated CMOS Class-E Power Amplifier Using Self-Biasing Technique with Cascaded Class-D Drivers

This paper describes the design of 5-GHz fully integrated CMOS class-E single-ended power amplifier (PA) for wireless transmitter applications in a 0.18-mu m CMOS technology. The proposed class-E PA employs the cascode topology with a self-biasing technique to reduce device stress. Three cascaded class-D driver amplifiers are used to actualize the sharp switching at the class-E power stage. All device components are integrated on chip and the chip area is 1.0 x 1.3 mm(2). The measurement results indicate that the PA delivers 16.4 dBm output power and 35.4 % power-added efficiency with 2.3 V power supply voltage into a 50 Omega load.