Shot noise of sequential tunneling in a triple-barrier resonant-tunneling diode

被引:10
作者
Yau, ST
Sun, HB
Edwards, PJ
Lynam, P
机构
[1] UNIV CANBERRA,FAC INFORMAT SCI & TECHNOL,BELCONNEN,ACT 2616,AUSTRALIA
[2] UNIV NEW S WALES,SCH PHYS,ADFA,CANBERRA,ACT 2600,AUSTRALIA
来源
PHYSICAL REVIEW B | 1997年 / 55卷 / 19期
关键词
CONDUCTORS; SUPPRESSION; SCATTERING; SYSTEMS; DEVICES;
D O I
10.1103/PhysRevB.55.12880
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The shot noise of a triple-barrier resonant-tunneling diode (TBRTD) has been characterized in the low-frequency regime. Suppression of shot noise has been observed in both bias polarities. The measured noise characteristics are the consequences of several electron transport mechanisms associated with the device. These include the Pauli exclusion principle, thermally activated tunneling, and electron energy relaxation. We describe the effect of these mechanisms in relation to the noise characteristics. The mechanisms lead to sequential electron tunneling, which is manifested in the noise characteristics of the TBRTD.
引用
收藏
页码:12880 / 12883
页数:4
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