Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing

被引：43

作者：

Polyakov, AY

Smirnov, NB

Govorkov, AV

Kim, J

Luo, B

Mehandru, R

Ren, F

Lee, KP

Pearton, SJ

Osinsky, AV

Norris, PE

机构：

[1] Inst Rare Met, Moscow 109017, Russia

[2] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[3] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[4] Corning Appl Technol, Woburn, MA 01801 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 91卷 / 08期

关键词：

D O I：

10.1063/1.1465119

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Multi-quantum-well GaN/InGaN heterojunction diodes prepared by metalorganic chemical vapor deposition on sapphire showed effects of strong tunneling in their I-V characteristics. The space charge region was shown to be located in the GaN/InGaN superlattice (SL). The injection of moderately high forward currents through the structure for several hours enhanced the overall tunneling through the structure and facilitated faster tunneling between the layers in the GaN/InGaN SL. These results may have relevance to the aging characteristics of light-emitting diodes under bias. (C) 2002 American Institute of Physics.

引用

页码：5203 / 5207

页数：5

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