Low-temperature dielectric properties of doped SrTiO3 single crystals and valency of ions

被引：18

作者：

Kulagin, N

Dojcilovic, J

Popovic, D

机构：

[1] Kharkov State Tech Univ Radioelect, UA-61045 Kharkov, Ukraine

[2] Univ Belgrade, YU-11000 Belgrade, Yugoslavia

来源：

CRYOGENICS | 2001年 / 41卷 / 10期

关键词：

valency dielectric constant; temperature dependence; strontium titanate; growth conditions;

D O I：

10.1016/S0011-2275(01)00152-7

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

This work is dedicated to the research of the dielectric parameters epsilon(()) and tan delta and the electronic state of regular and doped ions in pure and doped strontium titanate single crystals under T = 10 300 K. An anomaly of (lie temperature dependence of the dielectric parameters between 10 and 100 K was discovered for separate doped samples. The essential change of spectroscopic parameters and transition of some part of Ti4+ ions into Ti-2+,Ti-3+ states has been studied in detail. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：745 / 750

页数：6

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