Investigating and manipulating the molecular beam epitaxy growth kinetics of intrinsic magnetic topological insulator MnBi2Te4within situangle-resolved photoemission spectroscopy

Intrinsic magnetic topological insulator MnBi(2)Te(4)is the key to realizing the quantum anomalous Hall effect and other related quantum phenomena at a sufficiently high temperature for their practical electronic applications. The research progress on the novel material, however, is severely hindered by the extreme difficulty in preparing its high-quality thin films with well-controlled composition and thickness. Combining molecular beam epitaxy (MBE) andin situangle-resolved photoemission spectroscopy (ARPES), we have systematically studied the growth conditions and kinetics of MnBi(2)Te(4)thin films prepared by simple co-evaporation of Mn, Bi and Te. The transition and competition between the Mn-doped Bi(2)Te(3)and MnBi(2)Te(4)phases under different growth conditions have been mapped in detail, which gives the recipe and principles of growing high-quality MnBi(2)Te(4)thin films. Particularly, to obtain high quality MnBi(2)Te(4)films, it is crucial to raise the growth temperature as high as allowed by the nucleation of the films to minimize density of Mn substitutional atoms on Bi sites. The ARPES data also map the kinetic process in the nucleation and ripening of MnBi(2)Te(4)islands. These results offer the essential information for designing and optimizing the MBE growth procedure of MnBi2Te4-like compounds to achieve the exotic topological quantum effects.