A Deep Convolutional Neural Network for Wafer Defect Identification on an Imbalanced Dataset in Semiconductor Manufacturing Processes

被引:117
作者
Saqlain, Muhammad [1 ]
Abbas, Qasim [1 ]
Lee, Jong Yun [1 ]
机构
[1] Chungbuk Natl Univ, Dept Comp Sci, Cheongju 28644, South Korea
基金
新加坡国家研究基金会;
关键词
Feature extraction; Semiconductor device modeling; Training; Computational modeling; Convolutional neural networks; Fabrication; Data models; Wafer maps; wafer defect identification; deep learning; convolutional neural network; data augmentation; batch normalization; CLASSIFICATION; PATTERNS;
D O I
10.1109/TSM.2020.2994357
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Wafer maps contain information about various defect patterns on the wafer surface and automatic classification of these defects plays a vital role to find their root causes. Semiconductor engineers apply various methods for wafer defect classification such as manual visual inspection or machine learning-based algorithms by manually extracting useful features. However, these methods are unreliable, and their classification performance is also poor. Therefore, this paper proposes a deep learning-based convolutional neural network for automatic wafer defect identification (CNN-WDI). We applied a data augmentation technique to overcome the class-imbalance issue. The proposed model uses convolution layers to extract valuable features instead of manual feature extraction. Moreover, state-of-the-art regularization methods such as batch normalization and spatial dropout are used to improve the classification performance of the CNN-WDI model. The experimental results comparison using a real wafer dataset shows that our model outperformed all previously proposed machine learning-based wafer defect classification models. The average classification accuracy of the CNN-WDI model with nine different wafer map defects is 96.2%, which is an increment of 6.4% from the last highest average accuracy using the same dataset.
引用
收藏
页码:436 / 444
页数:9
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