Study of pore reorganisation during annealing of macroporous silicon structures for solar cell application

被引：26

作者：

Depauw, V. ^{[1
,2
]}

Richard, O. ^{[1
]}

Bender, H. ^{[1
]}

Gordon, I. ^{[1
]}

Beaucarne, G. ^{[1
]}

Poortmans, J. ^{[1
]}

Mertens, R. ^{[1
]}

Celis, J. -P. ^{[2
]}

机构：

[1] IMEC VZW, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, Dept Met & Mat Engn, B-3001 Louvain, Belgium

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 20期

基金：

澳大利亚研究理事会;

关键词：

macroporous silicon; silicon dioxide; argon anneal; silicon surface migration; structural change; void; thin-film silicon solar cell;

D O I：

10.1016/j.tsf.2007.12.041

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin layers of silicon for solar cells can be lifted-off from wafers by taking advantage of the property of macropores to reorganise at high temperature and, in specific conditions, to form a high-quality layer on top of an empty space. Those conditions need to be identified and this work focuses in particular on the annealing ambient composition. Its influence was investigated by scanning and transmission electron microscopy and by Fourier-transform infrared spectroscopy. Apart from hydrogen, which has been used in previous studies, argon was found to be also compatible with the reorganisation. This result points out that the presence of oxygen impurities may not be as deleterious as expected, but that those impurities complicate the set of reactions taking place during the high-temperature process. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：6934 / 6938

页数：5

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