Evolution of variable range hopping in strongly localized two dimensional electron gas at NdAlO3/SrTiO3 (100) heterointerfaces

被引：16

作者：

Annadi, A. ^{[1
,2
]}

Putra, A. ^{[1
,3
]}

Srivastava, A. ^{[1
,2
]}

Wang, X. ^{[1
,2
]}

Huang, Z. ^{[1
,2
]}

Liu, Z. Q. ^{[1
,2
]}

Venkatesan, T. ^{[1
,2
,4
]}

Ariando ^{[1
,2
]}

机构：

[1] Natl Univ Singapore, NUSNNI Nanocore, Singapore 117411, Singapore

[2] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore

[3] Natl Univ Singapore, Dept Engn Sci Programme, Singapore 117576, Singapore

[4] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 23期

基金：

新加坡国家研究基金会;

关键词：

INTERFACES; SUPERCONDUCTIVITY; COEXISTENCE; REGIME; OXIDES;

D O I：

10.1063/1.4768932

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report evolution of the two-dimensional electron gas behavior at the NdAlO3/SrTiO3 heterointerfaces with varying thicknesses of the NdAlO3 overlayer. The samples with a thicker NdAlO3 show strong localizations at low temperatures and the degree of localization is found to increase with the NdAlO3 thickness. The T-1/3 temperature dependence of the sheet resistance at low temperatures and the magnetoresistance study reveal that the conduction is governed by a two-dimensional variable range hopping mechanism in this strong localized regime. We attribute this thickness dependence of the transport properties of the NdAlO3/SrTiO3 interfaces to the interface strain induced by the overlayers. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768932]

引用

页数：4

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