Dielectric relaxation and AC conductivity of XS (X = Cd, Zn) compounds

被引:34
作者
El-Barry, AMA [1 ]
Atyia, HE [1 ]
机构
[1] Ain Shams Univ, Fac Educ, Dept Phys, Cairo, Egypt
关键词
dielectric relaxation; II-VI semiconductor; AC conductivity;
D O I
10.1016/j.physb.2005.06.011
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The dielectric properties of XS (X = Cd, Zn) compounds are studied by both capacitance and dissipation factor measurements in temperature range (303-523K) and frequency range (50Hz-5 MHz). A Debye-like relaxation of dielectric behavior has been observed (for US and ZnS compounds), which is found to be a thermally activated process with activation energies of 0.058 and 0.043 eV for US and ZnS compounds, respectively. Capacitance is found to decrease with increasing frequency, while it increases with increasing temperature. Obtained data of AC conductivity reveal that at low frequency sigma(AC)(omega) is independent of frequency and proportional to omega(s) at higher frequency for the two compounds. The values of the frequency exponent, s, were found to decrease by increasing temperature. This suggests that the Correlated Barrier Hopping (CBH) model is the operating mechanism. Finally, the maximum barrier height W-M and the density of states N(E-F) through the two compounds were determined. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:1 / 7
页数:7
相关论文
共 33 条
  • [1] Photoluminescence and structural properties of cadmium sulphide thin films grown by different techniques
    Aguilar-Hernández, J
    Contreras-Puente, G
    Morales-Acevedo, A
    Vigil-Galán, O
    Cruz-Gandarilla, F
    Vidal-Larramendi, J
    Escamilla-Esquivel, A
    Hernández-Contreras, H
    Hesiquio-Garduño, M
    Arias-Carbajal, A
    Chavarría-Castañeda, M
    Arriaga-Mejía, G
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2003, 18 (02) : 111 - 114
  • [2] Anderson J.C., 1964, DIELECTRICS
  • [3] POLARONS IN CRYSTALLINE AND NON-CRYSTALLINE MATERIALS
    AUSTIN, IG
    MOTT, NF
    [J]. ADVANCES IN PHYSICS, 1969, 18 (71) : 41 - +
  • [4] FREQUENCY-DEPENDENT ELECTRICAL TRANSPORT IN BISMUTH-MODIFIED AMORPHOUS-GERMANIUM SULFIDE SEMICONDUCTORS
    BHATNAGAR, VK
    BHATIA, KL
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1990, 119 (02) : 214 - 231
  • [5] CONCENTRATION AND FREQUENCY DEPENDENCES OF AC CONDUCTIVITY AND DIELECTRIC-CONSTANT OF IRON-BISMUTH OXIDE GLASSES .2.
    CHAUDHURI, BK
    CHAUDHURI, K
    SOM, KK
    [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1989, 50 (11) : 1149 - 1155
  • [6] CHU TL, 1991, P 22 IEEE PHOT SPEC, P113
  • [7] El Hichou A, 2004, SEMICOND SCI TECH, V19, P230, DOI 10.1088/0268-1242/19/2/018
  • [8] Elliot S.R., 1978, PHILOS MAG B, V37, P135
  • [9] TEMPERATURE-DEPENDENCE OF AC CONDUCTIVITY OF CHALCOGENIDE GLASSES
    ELLIOTT, SR
    [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 37 (05): : 553 - 560
  • [10] AC CONDUCTION IN AMORPHOUS-CHALCOGENIDE AND PNICTIDE SEMICONDUCTORS
    ELLIOTT, SR
    [J]. ADVANCES IN PHYSICS, 1987, 36 (02) : 135 - 218