Defect energy levels in density functional calculations: Alignment and band gap problem

被引:295
作者
Alkauskas, Audrius [1 ]
Broqvist, Peter
Pasquarello, Alfredo
机构
[1] Ecole Polytech Fed Lausanne, Inst Theoret Phys, CH-1015 Lausanne, Switzerland
关键词
D O I
10.1103/PhysRevLett.101.046405
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
For materials of varying band gap, we compare energy levels of atomically localized defects calculated within a semilocal and a hybrid density-functional scheme. Since the latter scheme partially relieves the band gap problem, our study describes how calculated defect levels shift when the band gap approaches the experimental value. When suitably aligned, defect levels obtained from total-energy differences correspond closely, showing average shifts of at most 0.2 eV irrespective of band gap. Systematic deviations from ideal alignment increase with the extent of the defect wave function. A guideline for comparing calculated and experimental defect levels is provided.
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页数:4
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共 35 条
[1]   Effect of improved band-gap description in density functional theory on defect energy levels in α-quartz [J].
Alkauskas, Audrius ;
Pasquarello, Alfredo .
PHYSICA B-CONDENSED MATTER, 2007, 401 :670-673
[2]   Oxygen vacancy in monoclinic HfO2:: A consistent interpretation of trap assisted conduction, direct electron injection, and optical absorption experiments [J].
Broqvist, Peter ;
Pasquarello, Alfredo .
APPLIED PHYSICS LETTERS, 2006, 89 (26)
[3]   A UNIVERSAL TREND IN THE BINDING-ENERGIES OF DEEP IMPURITIES IN SEMICONDUCTORS [J].
CALDAS, MJ ;
FAZZIO, A ;
ZUNGER, A .
APPLIED PHYSICS LETTERS, 1984, 45 (06) :671-673
[4]   Donor-vacancy complexes in Ge:: Cluster and supercell calculations [J].
Coutinho, J. ;
Oberg, S. ;
Torres, V. J. B. ;
Barroso, M. ;
Jones, R. ;
Briddon, P. R. .
PHYSICAL REVIEW B, 2006, 73 (23)
[5]  
Cpmd, 1997, COP IBM CORP 1990 20
[6]   Assessment of Gaussian-2 and density functional theories for the computation of ionization potentials and electron affinities [J].
Curtiss, LA ;
Redfern, PC ;
Raghavachari, K ;
Pople, JA .
JOURNAL OF CHEMICAL PHYSICS, 1998, 109 (01) :42-55
[7]   Negative oxygen vacancies in HfO2 as charge traps in high-k stacks [J].
Gavartin, J. L. ;
Ramo, D. Munoz ;
Shluger, A. L. ;
Bersuker, G. ;
Lee, B. H. .
APPLIED PHYSICS LETTERS, 2006, 89 (08)
[8]   SELF-CONSISTENT HARTREE-FOCK AND SCREENED-EXCHANGE CALCULATIONS IN SOLIDS - APPLICATION TO SILICON [J].
GYGI, F ;
BALDERESCHI, A .
PHYSICAL REVIEW B, 1986, 34 (06) :4405-4408
[9]   Quasiparticle corrections to the electronic properties of anion vacancies at GaAs(110) and InP(110) [J].
Hedstroem, Magnus ;
Schindlmayr, Arno ;
Schwarz, Guenther ;
Scheffler, Matthias .
PHYSICAL REVIEW LETTERS, 2006, 97 (22)
[10]   Self-trapped excitons in silicon dioxide: Mechanism and properties [J].
Ismail-Beigi, S ;
Louie, SG .
PHYSICAL REVIEW LETTERS, 2005, 95 (15)