Controlled growth of Cu2ZnSnS4 (CZTS) thin films for heterojunction solar-cell applications

被引：13

作者：

Inamdar, A. I. ^{[1
]}

Jeon, Ki-Young ^{[1
]}

Woo, Hyeon Seok ^{[1
]}

Jung, Woong ^{[1
]}

Im, Hyunsik ^{[1
]}

Kim, Hyungsang ^{[2
]}

机构：

[1] Dongguk Univ, Dept Semicond Sci, Seoul 100715, South Korea

[2] Dongguk Univ, Dept Phys, Seoul 100715, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2012年 / 60卷 / 10期

基金：

新加坡国家研究基金会;

关键词：

Cu2ZnSnS4 (CZTS) thin films; ZnS thin films; Magnetron sputtering; Chemical bath deposition (CBD); Solar cell; MATERIALS AVAILABILITY; OPTICAL-PROPERTIES; PHOTOVOLTAICS; ABSORBER; BINARY; SULFURIZATION; PRECURSORS; LAYERS;

D O I：

10.3938/jkps.60.1730

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Cu2ZnSnS4 (CZTS) thin films (absorber layers) were successfully synthesized on glass substrates by using a RF magnetron sputtering system. The films were rapidly thermally annealed in a nitrogen atmosphere for 20 minutes to improve the crytallinity. The formation of kesterite structures (JCPDS-26-0575) in the film was confirmed using X-ray diffraction (XRD) measurements. The improved crytallinity of the CZTS with a (112) orientation was observed with increasing annealing temperature. The band gaps of all the as-deposited and annealed films were found to be in the range from 1.97 to 1.55 eV. The films' stoichiometry and morphologies were investigated using scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDAX) measurements. The sample annealed at 500 A degrees C showed a uniform granular structure with an elemental composition near stoichiometric CZTS. Next, a buffer layer of ZnS for a heterojuntion solar cell was fabricated using a chemical bath deposition (CBD) technique. The films adhered well, were optically transparent and had band gap energy of 3.6 eV.

引用

页码：1730 / 1734

页数：5

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