Double-Gate Two-Step Source/Drain Poly-Si Thin-Film Transistor

被引：3

作者：

Chien, Feng-Tso ^{[1
]}

Hung, Chih-Ping ^{[1
]}

Chiu, Hsien-Chin ^{[2
]}

Kang, Tsung-Kuei ^{[1
]}

Cheng, Ching-Hwa ^{[1
]}

Tsai, Yao-Tsung ^{[3
]}

机构：

[1] Feng Chia Univ, Dept Elect Engn, Taichung 407, Taiwan

[2] Chang Gung Univ, Dept Elect Engn, Taoyuan 33302, Taiwan

[3] Natl Cent Univ, Dept Elect Engn, Jhongli 320, Taiwan

来源：

COATINGS | 2019年 / 9卷 / 04期

关键词：

thin-film transistor (TFT); polycrystalline silicon (poly-Si); kink effect; two-step source; drain (TSD); double gate (DG); TFT; CHANNEL;

D O I：

10.3390/coatings9040233

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A current improved and electric field reduced double-gate (DG) polycrystalline silicon thin-film transistor with two-step source/drain (DGTSD-TFT) design is proposed and demonstrated in this study. The two-step source/drain (TSD) design, which consists of a raised source/drain (RSD) area together with a partial gate overlapped lightly doped drain (P-GOLDD) structure, can lower the device drain electric field (DEF) to reveal a better device performance. Comparisons have been made with respect to a traditional single top gate (STG) device. The operation current of the proposed DGTSD-TFT is almost twice as large as that of the STG structure. The OFF-state leakage current and kink effect, as well as the ON/OFF current ratio for this double-gate and two-step source/drain structure, are also improved simultaneously because of a reduced DEF. A hot carrier stress test reveals that that two-step source/drain structure can achieve more stable device characteristics than the traditional device.

引用

页数：7

共 18 条

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