State of the art Power Switching Devices in SiC and their Applications

被引：0
|
作者：
Ostling, Mikael [1 ]
Salemi, Arash [1 ]
Elahipanah, Hossein [1 ]
Zetterling, Carl-Mikael [1 ]
机构：
[1] KTH Royal Inst Technol, Sch ICT Integrated Devices & Circuits, Electrum 229, SE-16440 Kista, Sweden
来源：
2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW) | 2016年
关键词：
Silicon Carbide; devices; Switch; transistor; low loss; high voltage; high temperature; SiC IC; SiC MEMS; Bio; SILICON-CARBIDE; IGBTS; MEMS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper gives an overview of the current state of the art device technology for SiC discrete devices and applications. The superior switching performance is discusses as well as the energy efficiency of SiC devices. New emerging applications of SiC devices are also discussed focusing on high temperature capability such as integrated digital and analog circuits up to 600 C. Finally, MEMS and Bio applications will be briefly reviewed.
引用
收藏
页码：122 / 123
页数：2
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