Analysis of indium surface segregation in molecular beam epitaxy of InGaAs/GaAs quantum wells

被引：25
作者：
Yamaguchi, K
Okada, T
Hiwatashi, F
机构：
[1] Department of Electronic Engineering, University of Electro-Communications, Chofu-shi, Tokyo 182
来源：
APPLIED SURFACE SCIENCE | 1997年 / 117卷
关键词：
molecular beam epitaxy; surface segregation; quantum well; heterointerface; kinetic model;
D O I：
10.1016/S0169-4332(97)80167-5
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Pseudomorphic InGaAs/GaAs quantum wells (QWs) were grown by molecular beam epitaxy (MBE) under various growth conditions. Surface segregation of indium atoms during MBE growth influenced the QW structures, and the evidence was measured by a secondary ion mass spectroscopy and a low temperature photoluminescence. Calculated results based on a kinetic model of the surface segregation were compared with experimental ones. It was found that the change of InGaAs/GaAs heterointerface due to the surface segregation can be almost predicted by a kinetic model, and a segregation energy could be estimated.
引用
收藏
页码：700 / 704
页数：5
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