Enhanced thermoelectric figure of merit in p-type Ag-doped ZnSb nanostructured with Ag3Sb

被引：86
|
作者：
Xiong, Ding-Bang [1 ,2 ]
Okamoto, Norihiko L. [1 ]
Inui, Haruyuki [1 ]
机构：
[1] Kyoto Univ, Dept Mat Sci & Engn, Kyoto 6068501, Japan
[2] Shanghai Jiao Tong Univ, State Key Lab Met Matrix Composites, Shanghai 200240, Peoples R China
来源：
SCRIPTA MATERIALIA | 2013年 / 69卷 / 05期
基金：
日本学术振兴会;
关键词：
Nanoparticle; Thermal conductivity; Thermal stability; Thermoelectric; Zinc antimonide; ZN4SB3; ZINC; BETA-ZN4SB3; PERFORMANCE; PHASE;
D O I：
10.1016/j.scriptamat.2013.05.029
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Zn-Sb systems are interesting as thermoelectric materials because the elements are relatively cheap and show low toxicity. In this work, a high thermoelectric figure of merit of 1.15 at 670 K is obtained in a p-type Ag-doped ZnSb nanostructured with in situ formed Ag3Sb because of its optimized carrier concentration and a significant reduction in lattice thermal conductivity. The samples also exhibit good thermal stability. The results here suggest that ZnSb is an efficient, stable and low-cost thermoelectric material and deserves more attention. (c) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码：397 / 400
页数：4
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