CMOS low dropout linear regulator with single Miller capacitor

被引：15

作者：

Huang, WJ ^{[1
]}

Lu, SH

Liu, SI

机构：

[1] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10617, Taiwan

[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan

来源：

ELECTRONICS LETTERS | 2006年 / 42卷 / 04期

关键词：

D O I：

10.1049/el:20064062

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 2-5 V 150 mA CMOS low dropout (LDO) linear regulator with a single Miller capacitor of 4 pF is presented. The proposed LDO regulator with a bandgap voltage reference has been fabricated in a 0.35 mu m CMOS process and the active chip area is 485 x 586 mu m. The maximum output current is 150 mA and the regulated output voltage is 1.8 V.

引用

页码：216 / 217

页数：2

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