Structural and electronic properties of identical-sized Zn nanoclusters grown on Si(111)-(7x7) surfaces

被引：11

作者：

Zhou, Changjie ^{[1
]}

Xue, Qikun ^{[2
]}

Jia, Jinfeng

Zhan, Huahan ^{[1
]}

Kang, Junyong ^{[1
]}

机构：

[1] Xiamen Univ, Dept Phys, Fujian Key Lab Semicond Mat & Applicat, Xiamen 361005, Peoples R China

[2] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China

来源：

JOURNAL OF CHEMICAL PHYSICS | 2009年 / 130卷 / 02期

基金：

中国国家自然科学基金;

关键词：

dangling bonds; electronic structure; nanostructured materials; nanotechnology; scanning tunnelling microscopy; scanning tunnelling spectroscopy; surface reconstruction; total energy; zinc; TOTAL-ENERGY CALCULATIONS; WAVE BASIS-SET; INITIAL-STAGES; SEMICONDUCTORS; DIFFRACTION; ADSORPTION; MICROSCOPY; CLUSTERS;

D O I：

10.1063/1.3046682

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Identical-sized Zn nanoclusters have been grown on Si(111)-(7x7) surfaces at room temperature. In situ scanning tunneling microscopy (STM) studies and first-principles total energy calculations show that room-temperature grown Zn nanoclusters tend to form the seven-Zn-atom structure with one excess Zn atom occupying characteristically the center of the cluster. The evolution of the surface electronic structures measured by scanning tunneling spectroscopy reveals that the formation of Zn nanoclusters is responsible for the saturation of the metallic Si adatom dangling bond states at about -0.3 and +0.5 V and causes the semiconducting characteristics of the nanoclusters. Furthermore, the Zn nanocluster in a faulted half unit cell empties the filled surface dangling bond state of the closest edge Si adatoms in the nearest neighboring uncovered unfaulted half unit cells at about -0.3 V, leading to the suppressed height of the closest edge Si adatoms in the filled-state STM images.

引用

页数：5

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