Growth and piezoelectric properties of Ca3Nb(Ga1-xAlx)3Si2O14(x=0.25 and 0.50) single crystals

被引:19
作者
Yokota, Yuui [1 ]
Ohashi, Yuji [2 ]
Kudo, Tetsuo [2 ]
Kochurikhin, Vladimir V. [3 ]
Kurosawa, Shunsuke [1 ,2 ]
Kamada, Kei [1 ,4 ]
Yoshikawa, Akira [1 ,2 ,4 ]
机构
[1] Tohoku Univ, New Ind Creat Hatchery Ctr NICHe, Sendai, Miyagi 9808579, Japan
[2] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
[3] Inst Gen Phys, Moscow 119991, Russia
[4] C&A Corp, Sendai, Miyagi 9808579, Japan
基金
日本科学技术振兴机构;
关键词
PHASE-UNIDIRECTIONAL TRANSDUCER; ACOUSTIC-WAVE PROPERTIES; PROPAGATION CHARACTERISTICS;
D O I
10.7567/JJAP.54.10ND13
中图分类号
O59 [应用物理学];
学科分类号
摘要
One inch Ca3NbGa3Si2O14(CNGS) and Ca3Nb(Ga1-xAlx)(3)Si2O14(CNGAS) bulk crystals with an ordered langasite-type structure were grown by a Czochralski method. CNGS bulk single crystals without cracks could be grown, while CNGAS bulk crystals with x = 0.25 and 0.50 included some cracks even under improved growth conditions. Lattice parameters and anisotropy on the structure of grown crystals were systematically decreased and increased by increasing the Al concentration, respectively. Although the density and dielectric constant epsilon(11) of an X-cut sample of the CNGAS crystal with x = 0.25 were decreased by Al substitution, the electromechanical coupling factor k(12) and piezoelectric constant d(11) were increased. The effects of Al substitution on piezoelectric properties were almost consistent with previous reports on the disordered langasite-type crystals except for their amount of change. (C) 2015 The Japan Society of Applied Physics
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页数:4
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