Electrical Properties of ZnO-Doped Nd(Co1/2Ti1/2)O3 Thin Films Prepared by RF Magnetron Sputtering

被引：7
作者：
Hsu, Cheng-Hsing [1 ]
He, Yi-Da [1 ]
机构：
[1] Natl United Univ, Dept Elect Engn, Miaoli 36003, Taiwan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 01期
关键词：
MICROWAVE DIELECTRIC-PROPERTIES; CERAMICS; FREQUENCIES; PEROVSKITE; CA; ND;
D O I：
10.7567/JJAP.52.01AC01
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The electrical properties and microstructures of ZnO-doped Nd(Co1/2Ti1/2)O-3 thin films prepared by rf-magnetron sputtering on indium tin oxide (ITO)/glass substrates at different rf powers and Ar/O-2 ratios have been investigated. X-ray diffraction pattern analysis showed that the deposited films exhibited a polycrystalline microstructure. All films exhibited the ZnO-doped Nd(Co1/2Ti1/2)O-3 orientation perpendicular to the substrate surface, and the uniformity of surface morphologies of the film increased with decreasing Ar partial pressure and rf power. At an Ar/O-2 ratio of 80/20 and a rf power of 250 W, the ZnO-doped Nd(Co1/2Ti1/2)O-3 films possess a dielectric constant of 28.6 at 1 kHz, a dissipation factor of 0.02 at 1 kHz, and a leakage current density of 3.6 x 10(-10) A/cm(2) at an electrical field of 20 kV/cm. (C) 2013 The Japan Society of Applied Physics
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页数：4
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