Demonstration of Fin-Tunnel Field-Effect Transistor with Elevated Drain

被引：27

作者：

Kim, Jang Hyun ^{[1
,2
]}

Kim, Hyun Woo ^{[2
,3
]}

Kim, Garam ^{[2
,3
]}

Kim, Sangwan ^{[4
]}

Park, Byung-Gook ^{[1
,2
]}

机构：

[1] Seoul Natl Univ, Dept Elect, Interuniv Semicond Res Ctr, Seoul 151744, South Korea

[2] Seoul Natl Univ, Dept Comp Engn, Seoul 151744, South Korea

[3] Seoul Natl Univ, Dept Elect, Seoul 151744, South Korea

[4] Ajou Univ, Dept Elect & Comp Engn, Suwon 16944, South Korea

来源：

MICROMACHINES | 2019年 / 10卷 / 01期

关键词：

band-to-band tunneling; tunnel field-effect transistor; low operating power device; tunneling resistance; sub- threshold swing; ambipolar current; elevated drain; FET; SUBTHRESHOLD;

D O I：

10.3390/mi10010030

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

In this paper, a novel tunnel field-effect transistor (TFET) has been demonstrated. The proposed TFET features a SiGe channel, a fin structure and an elevated drain to improve its electrical performance. As a result, it shows high-level ON-state current (I-ON) and low-level OFF-state current (I-OFF); ambipolar current (I-AMB). In detail, its I-ON is enhanced by 24 times more than that of Si control group and by 6 times more than of SiGe control group. The I-AMB can be reduced by up to 900 times compared with the SiGe control group. In addition, technology computer-aided design (TCAD) simulation is performed to optimize electrical performance. Then, the benchmarking of ON/OFF current is also discussed with other research group's results.

引用

页数：10

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