High pressure studies on topological insulator Bi2Se3

被引：1

作者：

Devidas, T. R. ^{[1
]}

Mani, Awadhesh ^{[1
]}

Bharathi, A. ^{[1
]}

机构：

[1] Indira Gandhi Ctr Atom Res, Condensed Matter Phys Div, Kalpakkam 603102, Tamil Nadu, India

来源：

SOLID STATE PHYSICS, VOL 57 | 2013年 / 1512卷

关键词：

Topological insulator; Bi2Se3; Metal-insulator transition; High pressure; SINGLE DIRAC CONE; SURFACE;

D O I：

10.1063/1.4791362

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High pressure electrical resistivity measurements upto 7.5 GPa have been performed on single crystal of Bi2Se3 topological insulator to study the evolution of its transport properties. A progressive increase in pressure drives this system from metal to increasingly insulating behaviour indicating the suppression of bulk conductivity. In the pressure induced insulating regime, the resistivity exhibits two step increase which is separated by a shoulder. The shoulder temperature is seen to increases with pressure.

引用

页码：964 / 965

页数：2

共 5 条

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