Reduced Electroforming Voltage and Enhanced Programming Stability in Resistive Switching of SiO2 Thin Films

被引：8

作者：

Chen, Yen-Ting ^{[1
]}

Fowler, Burt ^{[2
]}

Chang, Yao-Feng ^{[1
]}

Wang, Yanzhen ^{[1
]}

Xue, Fei ^{[1
]}

Zhou, Fei ^{[1
]}

Lee, Jack C. ^{[1
]}

机构：

[1] Univ Texas Austin, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78758 USA

[2] PrivaTran LLC, Austin, TX 78746 USA

来源：

ECS SOLID STATE LETTERS | 2013年 / 2卷 / 05期

关键词：

SILICON-OXIDE; MEMORIES;

D O I：

10.1149/2.009305ssl

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this letter, we have investigated the effects of incorporating a thin silicon layer into a SiO2-based resistive switching random access memory. The thin silicon layer was deposited onto the sidewall region of the device by physical vapor deposition. It is found that this thin silicon layer effectively reduces the electroforming voltage and stabilizes device current in both low-and high-resistance programmed states. It is concluded that the improved performance is due to formation of a more robust, more uniform conducting filament. As a result of this advantage, stable tri-state programming can be achieved in the SiO2-based resistive memory device. (C) 2013 The Electrochemical Society. All rights reserved.

引用

页码：N18 / N20

页数：3

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