In Situ Ligand Bonding Management of CsPbI3Perovskite Quantum Dots Enables High-Performance Photovoltaics and Red Light-Emitting Diodes

被引:87
作者
Shi, Junwei [1 ]
Li, Fangchao [1 ]
Jin, Yan [1 ]
Liu, Cheng [1 ]
Cohen-Kleinstein, Ben [2 ]
Yuan, Shuai [1 ]
Li, Youyong [1 ]
Wang, Zhao-Kui [1 ]
Yuan, Jianyu [1 ]
Ma, Wanli [1 ]
机构
[1] Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Jiangsu Key Lab Carbon Based Funct Mat & Devices, 199 Ren Ai Rd, Suzhou 215123, Jiangsu, Peoples R China
[2] Univ Waterloo, Waterloo Inst Nanotechnol Engn, Waterloo, ON N2L 3G1, Canada
基金
中国国家自然科学基金; 中国博士后科学基金;
关键词
CsPbI3; perovskites; quantum dots; solar cells; surface chemistry; LEAD HALIDE PEROVSKITES; SOLAR-CELLS; HIGH-EFFICIENCY; ALPHA-CSPBI3; PEROVSKITE; NANOCRYSTALS; STABILITY; EMISSION;
D O I
10.1002/anie.202010440
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
To fine-tune surface ligands towards high-performance devices, we developed an in situ passivation process for all-inorganic cesium lead iodide (CsPbI3) perovskite quantum dots (QDs) by using a bifunctional ligand, L-phenylalanine (L-PHE). Through the addition of this ligand into the precursor solution during synthesis, the in situ treated CsPbI(3)QDs display significantly reduced surface states, increased vacancy formation energy, higher photoluminescence quantum yields, and much improved stability. Consequently, the L-PHE passivated CsPbI(3)QDs enabled the realization of QD solar cells with an optimal efficiency of 14.62 % and red light-emitting diodes (LEDs) with a highest external quantum efficiency (EQE) of 10.21 %, respectively, demonstrating the great potential of ligand bonding management in improving the optoelectronic properties of solution-processed perovskite QDs.
引用
收藏
页码:22230 / 22237
页数:8
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