Frequency-domain demonstration of transit-time-limited, large-area InGaP-InP-InGaAs MSM photodetectors

被引：9
作者：
DeCorby, RG
MacDonald, RI
Sharma, R
Gouin, F
Noad, J
Puetz, N
机构：
[1] COMMUN RES CTR,OTTAWA,ON K2H 8S2,CANADA
[2] NORTEL TECHNOL,OTTAWA,ON K2H 8E9,CANADA
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1997年 / 9卷 / 07期
关键词：
high-speed devices; optoelectronic devices; photodetectors; Schottky diodes; semiconductor materials;
D O I：
10.1109/68.593374
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report transit-time-limited bandwidth (12 GHz at 12-V bias) for an InGaP-InP-InGaAs MSM photodetector with 2-mu m finger spacing, (100-mu m)(2) active area, and abrupt heterojunctions, The same device exhibits a very gradual rolloff up to 20 GHz, with an on/off isolation of greater than 40 dB across the measurement band, This is one of the first reports of transit-time-limited performance measured in the frequency domain for InGaAs-based MSM photodetectors, and these are the largest such devices reported to date, A pseudomorphic In0.8Ga0.2P cap layer is found to have an electrically stable free surface, requiring no special pre-treatment or passivation.
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收藏
页码：985 / 987
页数：3
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