Atomic structure of thin dysprosium-silicide layers on Si(111)

被引：29

作者：

Engelhardt, I ^{[1
]}

Preinesberger, C ^{[1
]}

Becker, SK ^{[1
]}

Eisele, H ^{[1
]}

Dähne, M ^{[1
]}

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

来源：

SURFACE SCIENCE | 2006年 / 600卷 / 03期

关键词：

lanthanides; silicides; silicon; thin film structures; scanning-tunneling microscopy;

D O I：

10.1016/j.susc.2005.11.029

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report on scanning tunneling microscopy results of thin dysprosium-silicide layers formed on Si(111). In the submonolayer regime, both a 2 root 3 x 2 root 3 R30 degrees and a 5 x 2 superstructure were found. Based on images taken at different tunneling conditions, a structure model could be developed for the 2 root 3 x 2 root 3 R30 degrees superstructure. For one monolayer, a I x I superstructure based on hexagonal DySi2 was observed, while several monolayers thick films are characterized by a root 3 x root 3 R30 degrees superstructure from Dy3Si5. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：755 / 761

页数：7

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