Model for Thermal Oxidation of Silicon

被引：3

作者：

Fadeev, A., V ^{[1
]}

Devyatko, Yu N. ^{[2
]}

机构：

[1] Russian Acad Sci, Valiev Inst Phys & Technol, Moscow 117218, Russia

[2] Natl Res Nucl Univ MEPhI, Moscow Engn Phys Inst, Moscow 115409, Russia

来源：

TECHNICAL PHYSICS | 2019年 / 64卷 / 04期

关键词：

GROWTH; SI(100); 1ST-PRINCIPLES; INTERFACE; LAYERS;

D O I：

10.1134/S1063784219040108

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nanometer-thick silicon oxide films are needed for miniaturization and increase in the working rate of electronic devices. Interpretation of the initial stages of silicon oxidation is necessary for fabrication of such structures. A theoretical model of the thermal oxidation of thin silicon monolayers that takes into account an increase in the stress in the transition (oxide-substrate) layer due to oxygen accumulation therein is proposed.

引用

页码：575 / 581

页数：7

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