Performance Enhancement of GaN High Electron-Mobility Transistors with Atomic Layer Deposition Al2O3 Passivation

被引：0

作者：

Xu, Dong ^{[1
]}

Chu, Kanin ^{[1
]}

Diaz, J. ^{[1
]}

Zhu, Wenhua ^{[1
]}

Roy, R. ^{[1
]}

Seekell, P. ^{[1
]}

Pleasant, L. Mt. ^{[1
]}

Isaak, R. ^{[1
]}

Yang, Xiaoping ^{[1
]}

Nichols, K. ^{[1
]}

Pritchard, D. ^{[1
]}

Duh, G. ^{[1
]}

Chao, P. C. ^{[1
]}

Xu, Min

Ye, Peide

机构：

[1] BAE Syst, Microelect Ctr, Elect Syst, Nashua, NH 03060 USA

来源：

2012 LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES (LEC) | 2012年

关键词：

gallium nitride; GaN; high electron-mobility transistor; HEMT; atomic layer deposition; ALD; aluminum oxide; pulsed-IV;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

we report a new passivation technology based on atomic layer deposition (ALD) aluminum oxide for the GaN high electron-mobility transistor (HEMT). This new process markedly enhances GaN device's electrical performance including DC, and in particular the pulsed-IV characteristics. The achieved improvement is attributed to the outstanding interface between III-N and the ALD aluminum oxide resulting from the unique process of the ALD growth, featuring a wet-chemical-based wafer preparation as well as the self-cleaning at the very beginning of the whole growth process.

引用

页数：3

共 7 条

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