Surfactant effects of gallium on quality of AlN epilayers grown via metal-organic chemical-vapour deposition on SiC substrates

被引：13
|
作者：
Al Tahtamouni, T. M. [1 ]
Li, J. [2 ]
Lin, J. Y. [2 ]
Jiang, H. X. [2 ]
机构：
[1] Yarmouk Univ, Dept Phys, Irbid 21163, Jordan
[2] Texas Tech Univ, Dept Elect & Comp Engn, Lubbock, TX 79409 USA
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2012年 / 45卷 / 28期
关键词：
PHASE EPITAXY; ELECTRICAL CHARACTERISTICS; AIN EPILAYERS; PHOTOLUMINESCENCE; DISLOCATIONS; SAPPHIRE; DEVICES;
D O I：
10.1088/0022-3727/45/28/285103
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Effects of gallium as a surfactant for the growth of AlN epilayers on SiC substrates by metal-organic chemical-vapour deposition have been studied. It was found that the use of gallium as a surfactant enables the growth of thick, crack-free AlN epilayers on SiC substrates. The photoluminescence and x-ray diffraction (XRD) analysis show that gallium surfactant can reduce some of the tensile strain in AlN epilayers and it improves the surface smoothness. XRD rocking curves yielded decreased full widths at half maximum for the (1 0 5) and (0 0 2) reflections, indicating a reduction in threading dislocation density in the AlN epilayers.
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页数：4
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