Surfactant effects of gallium on quality of AlN epilayers grown via metal-organic chemical-vapour deposition on SiC substrates

被引：13

作者：

Al Tahtamouni, T. M. ^{[1
]}

Li, J. ^{[2
]}

Lin, J. Y. ^{[2
]}

Jiang, H. X. ^{[2
]}

机构：

[1] Yarmouk Univ, Dept Phys, Irbid 21163, Jordan

[2] Texas Tech Univ, Dept Elect & Comp Engn, Lubbock, TX 79409 USA

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2012年 / 45卷 / 28期

关键词：

PHASE EPITAXY; ELECTRICAL CHARACTERISTICS; AIN EPILAYERS; PHOTOLUMINESCENCE; DISLOCATIONS; SAPPHIRE; DEVICES;

D O I：

10.1088/0022-3727/45/28/285103

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Effects of gallium as a surfactant for the growth of AlN epilayers on SiC substrates by metal-organic chemical-vapour deposition have been studied. It was found that the use of gallium as a surfactant enables the growth of thick, crack-free AlN epilayers on SiC substrates. The photoluminescence and x-ray diffraction (XRD) analysis show that gallium surfactant can reduce some of the tensile strain in AlN epilayers and it improves the surface smoothness. XRD rocking curves yielded decreased full widths at half maximum for the (1 0 5) and (0 0 2) reflections, indicating a reduction in threading dislocation density in the AlN epilayers.

引用

收藏

页数：4

相关论文

共 22 条

[1] Electrical characteristics of metal/AlN/n-type 6H-SiC(0001) heterostructures [J].

Aboelfotoh, MO ;

Kern, RS ;

Tanaka, S ;

Davis, RF ;

Harris, CI .

APPLIED PHYSICS LETTERS, 1996, 69 (19) :2873-2875

[2] High quality AlN grown on SiC by metal organic chemical vapor deposition [J].

Chen, Z. ;

Newman, S. ;

Brown, D. ;

Chung, R. ;

Keller, S. ;

Mishra, U. K. ;

Denbaars, S. P. ;

Nakamura, S. .

APPLIED PHYSICS LETTERS, 2008, 93 (19)

[3] Hybrid AIN-SiC deep ultraviolet schottky barrier photodetectors [J].

Dahal, R. ;

Al Tahtamouni, T. M. ;

Fan, Z. Y. ;

Lin, J. Y. ;

Jiang, H. X. .

APPLIED PHYSICS LETTERS, 2007, 90 (26)

[4] AlN avalanche photodetectors [J].

Dahal, R. ;

Al Tahtamouni, T. M. ;

Lin, J. Y. ;

Jiang, H. X. .

APPLIED PHYSICS LETTERS, 2007, 91 (24)

[5] 231-261 nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire [J].

Hirayama, Hideki ;

Yatabe, Tohru ;

Noguchi, Norimichi ;

Ohashi, Tomoaki ;

Kamata, Norihiko .

APPLIED PHYSICS LETTERS, 2007, 91 (07)

[6] Impact of high-temperature growth by metal-organic vapor phase epitaxy on microstructure of AlN on 6H-SiC substrates [J].

Imura, Masataka ;

Sugimura, Hiroki ;

Okada, Narihito ;

Iwaya, Motoaki ;

Kamiyama, Satoshi ;

Amano, Hiroshi ;

Akasaki, Isamu ;

Bandoh, Akira .

JOURNAL OF CRYSTAL GROWTH, 2008, 310 (7-9) :2308-2313

[7] Dislocations in AIN epilayers grown on sapphire substrate by high-temperature metal-organic vapor phase epitaxy [J].

Imura, Masataka ;

Nakano, Kiyotaka ;

Fujimoto, Naoki ;

Okada, Narihito ;

Balakrishnan, Krishnan ;

Iwaya, Motoaki ;

Kamiyama, Satoshi ;

Amano, Hiroshi ;

Akasaki, Isamu ;

Noro, Tadashi ;

Takagi, Takashi ;

Bandoh, Akira .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (4A) :1458-1462

[8] Dependence of crystal quality on residual strain in strain-controlled thin AlN layer grown by metalorganic vapor phase epitaxy [J].

Ishihara, Y ;

Yamamoto, J ;

Kurimoto, M ;

Takano, T ;

Honda, T ;

Kawanishi, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1999, 38 (11B) :L1296-L1298

[9] III-nitride UV devices [J].

Khan, MA ;

Shatalov, M ;

Maruska, HP ;

Wang, HM ;

Kuokstis, E .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (10) :7191-7206

[10]

Krost A, 2002, PHYS STATUS SOLIDI A, V194, P361, DOI 10.1002/1521-396X(200212)194:2<361::AID-PSSA361>3.0.CO