Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

被引：1178

作者：

Tsao, J. Y. ^{[1
]}

Chowdhury, S. ^{[2
]}

Hollis, M. A. ^{[3
]}

Jena, D. ^{[4
,5
]}

Johnson, N. M. ^{[6
]}

Jones, K. A. ^{[7
]}

Kaplar, R. J. ^{[1
]}

Rajan, S. ^{[8
,9
]}

Van de Walle, C. G. ^{[10
]}

Bellotti, E. ^{[11
]}

Chua, C. L. ^{[6
]}

Collazo, R. ^{[12
]}

Coltrin, M. E. ^{[1
]}

Cooper, J. A. ^{[13
]}

Evans, K. R. ^{[14
]}

Graham, S. ^{[15
]}

Grotjohn, T. A. ^{[16
]}

Heller, E. R. ^{[17
]}

Higashiwaki, M. ^{[18
]}

Islam, M. S. ^{[2
]}

Juodawlkis, P. W. ^{[19
]}

Khan, M. A. ^{[20
]}

Koehler, A. D. ^{[21
]}

Leach, J. H. ^{[14
]}

Mishra, U. K. ^{[22
]}

Nemanich, R. J. ^{[23
]}

Pilawa-Podgurski, R. C. N. ^{[24
]}

Shealy, J. B. ^{[25
]}

Sitar, Z. ^{[26
]}

Tadjer, M. J. ^{[21
]}

Witulski, A. F. ^{[27
]}

Wraback, M. ^{[28
]}

Simmons, J. A. ^{[29
]}

机构：

[1] Sandia Natl Labs, Mat Phys & Chem Sci Ctr, POB 5800, Albuquerque, NM 87185 USA

[2] Univ Calif Davis, Dept Elect & Comp Engn, 3133 Kemper Hall, Davis, CA 95616 USA

[3] MIT, Adv Technol Div, Lincoln Lab, 244 Wood St, Lexington, MA 02421 USA

[4] Cornell Univ, Dept Elect & Comp Engn, 326 Bard Hall, Ithaca, NY 14853 USA

[5] Cornell Univ, Dept Mat Sci & Engn, 326 Bard Hall, Ithaca, NY 14853 USA

[6] PARC, Mat & Elect Devices Lab, 3333 Coyote Hill Rd, Palo Alto, CA 94303 USA

[7] US Army Res Lab, Sensors & Elect Devices Directorate, 2800 Powder Mill Rd, Delphi, MD 20783 USA

[8] Ohio State Univ, Dept Elect & Comp Engn, 2015 Neil Ave,205 Dreese Lab, Columbus, OH 43210 USA

[9] Ohio State Univ, Dept Mat Sci & Engn, 2015 Neil Ave,205 Dreese Lab, Columbus, OH 43210 USA

[10] Univ Calif Santa Barbara, Dept Mat, 2510 Engn 2, Santa Barbara, CA 93106 USA

[11] Boston Univ, Dept Elect & Comp Engn, 8 St Marys St Room 533, Boston, MA 02215 USA

[12] North Carolina State Univ, Dept Mat Sci & Engn, 911 Partners Way EBI 219, Raleigh, NC 27695 USA

[13] Purdue Univ, Dept Elect & Comp Engn, 1205 West State St, W Lafayette, IN 47906 USA

[14] Kyma Technol Inc, 8829 Midway West Rd, Raleigh, NC 27617 USA

[15] Georgia Inst Technol, Dept Mech Engn, 771 Ferst Dr, Atlanta, GA 30332 USA

[16] Michigan State Univ, Dept Elect & Comp Engn, 2120 Engn Bldg, E Lansing, MI 48824 USA

[17] Air Force Res Lab, Mat & Mfg Directorate, 3005 Hobson Way, Wright Patterson AFB, OH 45433 USA

[18] Natl Inst Informat & Communicat Technol, Green ICT Device Adv Dev Ctr, 4-2-1 Nukui Kitamachi, Koganei, Tokyo, Japan

[19] MIT, Lincoln Lab, Quantum Informat & Integrated Nanosyst Grp, 244 Wood St, Lexington, MA 02421 USA

[20] Univ South Carolina, Dept Elect Engn, 301 Main St Swearingen 3A26, Columbia, SC 29208 USA

[21] Naval Res Lab, High Power Elect Branch, 4555 Overlook Ave SW, Washington, DC 20375 USA

[22] Univ Calif Santa Barbara, Dept Elect & Comp Engn, 2215C Engn Sci Bldg, Santa Barbara, CA 93106 USA

[23] Arizona State Univ, Dept Phys, POB 871504, Tempe, AZ 85287 USA

[24] Univ Illinois, Elect & Comp Engn, 306 North Wright St 4042 ECE, Urbana, IL 61801 USA

[25] Akoustis Technol, 9805 H Northcross Ctr Court, Huntersville, NC 28078 USA

[26] North Carolina State Univ, Dept Mat Sci & Engn, 911 Partners Way EBI 217, Raleigh, NC 27695 USA

[27] Vanderbilt Univ, Dept Elect Engn, 1025 16th Av South,Ste 200, Nashville, TN 37235 USA

[28] US Army Res Lab, Sensors & Elect Devices Directorate, 2800 Powder Mill Rd, Adelphi, MD 20783 USA

[29] Sandia Natl Labs, Adv Sci & Technol Div, POB 5800, Albuquerque, NM 87185 USA

来源：

ADVANCED ELECTRONIC MATERIALS | 2018年 / 4卷 / 01期

基金：

美国国家科学基金会; 美国能源部;

关键词：

aluminum nitride; boron nitride; diamond; extreme environments; gallium oxide; power electronics; ultrawide bandgaps; UV-C; NEGATIVE-ELECTRON-AFFINITY; CUBIC BORON-NITRIDE; BETA-GA2O3; SINGLE-CRYSTALS; TERMINATED DIAMOND SURFACES; NITROGEN-VACANCY CENTERS; LIGHT-EMITTING-DIODES; ALUMINUM NITRIDE; HIGH-TEMPERATURE; GALLIUM-NITRIDE; THERMAL-CONDUCTIVITY;

D O I：

10.1002/aelm.201600501

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Ultrawide-bandgap (UWBG) semiconductors, with bandgaps significantly wider than the 3.4 eV of GaN, represent an exciting and challenging new area of research in semiconductor materials, physics, devices, and applications. Because many figures-of-merit for device performance scale nonlinearly with bandgap, these semiconductors have long been known to have compelling potential advantages over their narrower-bandgap cousins in high-power and RF electronics, as well as in deep-UV optoelectronics, quantum information, and extreme-environment applications. Only recently, however, have the UWBG semiconductor materials, such as high Al-content AlGaN, diamond and Ga2O3, advanced in maturity to the point where realizing some of their tantalizing advantages is a relatively near-term possibility. In this article, the materials, physics, device and application research opportunities and challenges for advancing their state of the art are surveyed.

引用

页数：49

共 347 条

[1] Growth of β-Ga2O3 Single Crystals by the Edge-Defined, Film Fed Growth Method [J].

Aida, Hideo ;

Nishiguchi, Kengo ;

Takeda, Hidetoshi ;

Aota, Natsuko ;

Sunakawa, Kazuhiko ;

Yaguchi, Yoichi .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (11) :8506-8509

[2]

Aigner G. F. R., 2015, P 6 INT S AC DEV FUT, P7

[3] High carrier mobility in ultrapure diamond measured by time-resolved cyclotron resonance [J].

Akimoto, Ikuko ;

Handa, Yushi ;

Fukai, Katsuyuki ;

Naka, Nobuko .

APPLIED PHYSICS LETTERS, 2014, 105 (03)

[4] Radiation Effects in Commercial 1200 V 24 A Silicon Carbide Power MOSFETs [J].

Akturk, A. ;

McGarrity, J. M. ;

Potbhare, S. ;

Goldsman, N. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2012, 59 (06) :3258-3264

[5]

Al Balushi ZY, 2016, NAT MATER, V15, P1166, DOI [10.1038/NMAT4742, 10.1038/nmat4742]

[6]

Altman D, 2014, INTSOC CONF THERMAL, P1199, DOI 10.1109/ITHERM.2014.6892416

[7] Defect and stress control of AlGaN for fabrication of high performance UV light emitters [J].

Amano, H ;

Miyazaki, A ;

IIda, K ;

Kawashima, T ;

Iwaya, M ;

Kamiyama, S ;

Akasaki, I ;

Liu, R ;

Bell, A ;

Ponce, FA ;

Sahonta, S ;

Cherns, A .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2004, 201 (12) :2679-2685

[8]

Anderson T. J., 2015, ECS Transactions, V69, P99, DOI 10.1149/06911.0099ecst

[9] Activation of Mg implanted in GaN by multicycle rapid thermal annealing [J].

Anderson, T. J. ;

Feigelson, B. N. ;

Kub, F. J. ;

Tadjer, M. J. ;

Hobart, K. D. ;

Mastro, M. A. ;

Hite, J. K. ;

Eddy, C. R., Jr. .

ELECTRONICS LETTERS, 2014, 50 (03) :197-198

[10]

[Anonymous], 2009, HDB NITRIDE SEMICOND

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